Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the device level to circuit level, both for drivers and power conversions architecturesDemonstrates how GaN may be a superior technology for switching devices, enabling both high frequency and high efficiency power conversionEnables design of smaller and more efficient power supplies
| ISBN: | 9783030085940 |
|---|---|
| Sprache: | Englisch |
| Seitenzahl: | 232 |
| Produktart: | Kartoniert / Broschiert |
| Herausgeber: | Meneghesso, Gaudenzio Meneghini, Matteo Zanoni, Enrico |
| Verlag: | Springer International Publishing |
| Veröffentlicht: | 30.01.2019 |
| Schlagworte: | GaN Reliability GaN device physics GaN for Power Conversion GaN transistors Gallium Nitride |
Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.