Analysis and Design of MOSFETs
Analysis and Design of MOSFETs: Modeling, Simulation, and ParameterExtraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and ParameterExtraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
| Autor: | Garcia-Sanchez, Francisco Juin Jei Liou Ortiz-Conde, Adelmo |
|---|---|
| ISBN: | 9780412146015 |
| Sprache: | Englisch |
| Seitenzahl: | 349 |
| Produktart: | Gebunden |
| Verlag: | Springer US |
| Veröffentlicht: | 30.09.1998 |
| Untertitel: | Modeling, Simulation, and Parameter Extraction |
| Schlagworte: | Germanium Leistungsfeldeffekttransistor MOSFET field-effect transistor metal oxide semiconductur field-effect transistor modeling physics semiconductor simulation transistor |